We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
High‐Leakage‐Resistance and Low‐Turn‐On‐Voltage Upconversion Devices Based on Perovskite Quantum Dots (Adv. Funct. Mater. 1/2024).
- Authors
Chen, Lung‐Chien; Chen, Sih‐An; Uma, Kasimayan; Chiang, Chih‐Hsun; Xie, Jia‐Xun; Tseng, Zong‐Liang; Liu, Shun‐Wei
- Abstract
In the article "High-Leakage-Resistance and Low-Turn-On-Voltage Upconversion Devices Based on Perovskite Quantum Dots," Zong-Liang Tseng, Shun-Wei Liu, and their colleagues present a method for improving the leakage resistance and turn-on voltage of solution-processed upconversion devices. They achieve this by using emissive perovskite quantum dots and a hole-transporting layer, which enhance the quality of the quantum-dot films and offer a new approach to designing high-performance upconversion devices. This research provides valuable insights for the development of more efficient and effective upconversion devices.
- Subjects
QUANTUM dots; PEROVSKITE; PHOTON upconversion
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 1, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202470004