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- Title
Resistive switching memory utilizing water and titanium dioxide thin film Schottky diode.
- Authors
Khan, Muhammad Umair; Hassan, Gul; Bae, Jinho
- Abstract
Colorless and odorless water is an important liquid element to all life on earth. In this paper, a novel resistive switching device is presented by applying a water (H2O) on titanium dioxide (TiO2) thin film based Schottky diode. The Ag electrodes are fabricated with screen printer and the TiO2 film are fabricated through a spin coater. The polydimethylsiloxane mold with holes is engineered to lock water. Applying dual voltage sweep of ± 5 V, it exhibits high resistance state of 120.6 kΩ and low resistance state of 9.4 kΩ with 100 endurance cycles, and it is stably and consistently operated for long retention tome of 104 s with Roff/Ron ratio of 12.82. From the results, we can say that liquid based materials can be used to fabricate resistive memory devices.
- Subjects
TITANIUM dioxide films; SCHOTTKY barrier diodes; COMPUTER storage devices; THIN films; TITANIUM dioxide
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 20, p18744
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-02227-7