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- Title
Integration of microwave termination based on TaN thin films on ferrite substrates.
- Authors
Dainan Zhang; Liang Ji; Kolodzey, James
- Abstract
Integration of microwave discrete devices such as isolators and circulators is highly desired for radar and communication platforms and in particular as components used in transmit and receive (T/R) modules. In those applications, Tantalum nitride (TaN) films are widely used as a surface mounted termination to improve the reliability and performance. In the current work, TaN thin films were directly deposited on polycrystalline ferrite substrate (Ni0.3Zn0.7Fe2O4) to be integrated with isolators or circulators. The deposition conditions were first optimized to obtain suitable sheet resistance and near zero temperature coefficients of resistance (TCR). Next a 50 Ω microwave termination was designed and fabricated using standard photolithography techniques. Broadband measurements show that the terminator has a low voltage standing wave ratio (VSWR) of less than 1.20 in the frequency range of DC-20 GHz. The measured resistance was between 48 and 54 Ω.
- Subjects
MICROWAVES; ELECTRIC waves; TANTALUM compounds; TRANSITION metal compounds; FERRITES
- Publication
European Physical Journal - Applied Physics, 2015, Vol 72, Issue 1, p10101-p1
- ISSN
1286-0042
- Publication type
Article
- DOI
10.1051/epjap/2015140497