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- Title
Current-induced magnetization switching in atomthick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
- Authors
Mengxing Wang; Wenlong Cai; Kaihua Cao; Jiaqi Zhou; Jerzy Wrona; Shouzhong Peng; Huaiwen Yang; Jiaqi Wei; Wang Kang; Youguang Zhang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Weisheng Zhao
- Abstract
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nanoscale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω μm2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing. The critical switching current density could be lower than 3.0 MAcm-2 for devices with a 45-nm radius.
- Subjects
MAGNETIC tunnelling; TUNNEL magnetoresistance; TUNNEL junctions (Materials science); SPIN transfer torque; MAGNETIZATION; RESONANT tunneling
- Publication
Nature Communications, 2018, Vol 9, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-018-03140-z