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Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000976
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- Article
Dependence of Sensitivity, Derivative of Transfer Curve and Current on Bias Voltage Magnitude and Polarity in Tunneling Magnetoresistance Sensors.
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- Sensors (14248220), 2023, v. 23, n. 3, p. 1214, doi. 10.3390/s23031214
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- Article
Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors.
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- Sensors (14248220), 2021, v. 21, n. 7, p. 2495, doi. 10.3390/s21072495
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- Article
Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors.
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- Sensors (14248220), 2016, v. 16, n. 11, p. 1821, doi. 10.3390/s16111821
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- Article
Current-induced magnetization switching in atomthick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
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- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-03140-z
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- Article
Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology.
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- Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 6, p. 264, doi. 10.1049/ell2.12103
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- Article
SYMBOLE PAŃSTWOWE I NARODOWE POLSKI W CZASACH NAJNOWSZYCH.
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- Studia Historyczne, 2008, v. 51, n. 3/4, p. 343
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- Article