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- Title
InGaN/GaN quantum well improved by in situ SiN<sub> x</sub> pretreatment of GaN template.
- Authors
Huang, Demeng; Wu, Zhengyuan; Fang, Zhilai
- Abstract
In situ SiN x pretreatment was employed to modify the growth behavior and optical properties of InGaN/GaN quantum wells (QWs). With moderate SiN x pretreatment surface smoothness of InGaN/GaN QWs was improved and attributed to enhanced layer growth by Ga surfactant effect. Significant increase of photoluminescence peak intensity and relatively uniform and bright cathodoluminescence images were observed, which were attributed to the improvement in crystalline quality and strain reduction for the InGaN/GaN QWs with moderate SiN x pretreatment.
- Subjects
SEMICONDUCTOR quantum wells; OPTICAL properties of semiconductors; SILICON nitride films; PHOTOLUMINESCENCE measurement; CATHODOLUMINESCENCE
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 12, p3130
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600157