Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleStep-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy.AuthorsTingberg, Tobias; Larsson, Anders; Ive, TommyAbstractWe report on step-flow growth of GaN(0001) on 4H-SiC(0001) substrates by plasma-assisted molecular beam epitaxy. The GaN layers were deposited directly on the substrate without using a buffer layer. A growth temperature ofSubjectsMOLECULAR beam epitaxy; SUBSTRATES (Materials science); EPITAXY; MOLECULAR beams; CHEMICAL beam epitaxyPublicationPhysica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 9, p2498ISSN1862-6300Publication typeArticleDOI10.1002/pssa.201533001