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- Title
EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE.
- Authors
XUE, S. W.; ZU, X. T.; XIANG, X.; CHEN, M. Y.; ZHENG, W. G.
- Abstract
ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.
- Subjects
ZINC oxide thin films; ION implantation; X-ray diffraction; PHOTOLUMINESCENCE; OPTICAL diffraction
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, Vol 21, Issue 31, p5257
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979207038290