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- Title
Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared.
- Authors
Xiong Gong; Ming-Hong Tong; Sung Heum Park; Liu, Michelle; Jen, Alex; Heeger, Alan J.
- Abstract
Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.
- Subjects
SEMICONDUCTORS; POLYMERS; INDUSTRIAL applications; SCIENTIFIC apparatus &; instruments industry; OPTOELECTRONIC devices; SPECTRAL sensitivity; ELECTRODES; TEMPERATURE; INFRARED photography
- Publication
Sensors (14248220), 2010, Vol 10, Issue 7, p6488
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s100706488