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- Title
Synthesis, electrical transport mechanisms and photovoltaic characteristics of p-ZnIn<sub>2</sub>Se<sub>4</sub>/n-CdTe thin film heterojunction.
- Authors
Dhruv, D. K.; Patel, B. H.; Agrawal, Naveen; Banerjee, Rupak; Dhruv, S. D.; Patel, P. B.; Patel, Vikas
- Abstract
The synthesis and electrical transport features of vacuum-deposited p-ZnIn2Se4/n-CdTe (p-ZIS/n-CT) heterojunction diode (HJD) are discussed. Transmission electron microscopy (TEM) was used to characterize the microstructures of p-ZIS and n-CT thin films. The Hall measurement system determined the conductivity and carrier concentration of the ZIS and CT films; the acceptor concentration (Na) for ZIS film and donor concentration ( N d ) for CT film observed are 4.12 × 10 13 cm - 3 and 2.80 × 10 14 cm - 3 , respectively. The DC electrical resistance (R ) variation with temperature (T) determines thermal activation (impurity-based conduction) and bandgap energies of p-ZIS and n -CT thin films. Scanning electron microscopy (SEM) was used to look at the surface morphology of p -ZIS / n -CT HJD . The semiconductor characterization system (SCS-4200) was used to characterize the current–voltage ( I - V ) and capacitance–voltage (C–V) of the p -ZIS / n -CT HJD at different T ( 303 - 340 K ). The p -ZIS / n -CT HJD 's dark I - V finding shows conventional diode nature with a decent rectification ratio (RR) ( ≃ 4.34 × 10 5 at ± 2.0 V ). At a given bias, the RR value drops as T increases. The systematic assessment of I - V data suggests the thermionic emission (TE) mechanism at lower bias and the space charge-limited conduction (SCLC) mechanism at higher bias. The quantitative analysis estimates the barrier height ( φ b ) as ≃ 0.79 eV (from I - V measurements) and ≃ 0.88 eV (from C–V measurements). Cheung's function was utilized to derive the φ b , ideality factor (n ) and the series resistance ( R s ) of the p-ZIS/n-CT HJD. With a rise in T , HJD's saturation current ( I s ), n and φ b rise, whilst, R s falls. To gain insight into depletion behaviour, a study examined space charge and electric field distributions for abrupt p-ZIS/n-CT HJD. The experimental findings of Anderson's model corroborate a theoretical energy band diagram for the p-ZIS/n-CT HJD. The p-ZIS/n-CT HJD's photovoltaic (PV) characterization resulted in a 0.51 fill factor and 1.04% efficiency. The implications are discussed.
- Subjects
ELECTRIC charge; THIN films; CARRIER density; HETEROJUNCTIONS; ANDERSON model; HALL effect; SPACE charge
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 31, p24003
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-08755-z