Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleBand-bending Analysis of Metal-Oxide-Semiconductor (MOS) Interface by In Situ Biasing Electron Holography.AuthorsFukushima, Y; Mori, D; Terao, Y; Yamamoto, K; Takigawa, ASubjectsMETAL oxide semiconductors; ELECTRON holographyPublicationMicroscopy & Microanalysis, 2023, p1338ISSN1431-9276Publication typeAbstractDOI10.1093/micmic/ozad067.686