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- Title
Electroforming and bipolar resistive switching in Si-SiO-VO-Au binary oxide structure.
- Authors
Putrolainen, V.; Velichko, A.; Boriskov, P.; Pergament, A.; Stefanovich, G.; Kuldin, N.
- Abstract
We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si-SiO-VO-Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized silicon channel in SiO and reversible modulation of conductivity in thin VO layer at the channel boundary. The radius of this silicon channel is found from calculations based on the heat equation and atomic force microscopy data.
- Subjects
ELECTROFORMING; SWITCHING theory; SILICON oxide; VANADIUM oxide; BINARY metallic systems; MAGNETRON sputtering
- Publication
Technical Physics Letters, 2015, Vol 41, Issue 7, p672
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785015070287