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- Title
Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions.
- Authors
Bhattachar-yya, D.; Vinokurov, D. A.; Gusinskiı, G. M.; Elyukhin, V. A.; Kovalenkov, O. V.; Kyutt, R. N.; Marsh, J. H.; Naıdenov, V. O.; Portnoı, E. L.
- Abstract
The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 10[sup 11]-5 × 10[sup 12] cm[sup -2] shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks.
- Subjects
DOPPLER effect; PHOTOCHEMOTHERAPY
- Publication
Technical Physics Letters, 1998, Vol 24, Issue 9, p690
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262246