We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
A Theoretical Analysis of Spin-Dependent Tunneling in ZnO-Based Heterostructures.
- Authors
Chandrasekar, L. Bruno; Karunakaran, M.
- Abstract
The electron tunneling in ZnO/ZnCdO semiconductor heterostructure is studied using the matrix method. The spin-polarization is examined due to Dresselhaus spin–orbit interaction and Rashba spin–orbit interaction. The total spin-polarization is mainly due to Dresselhaus spin–orbit interaction and the Rashba spin–orbit interaction is small. The high degree of spin polarization can be achieved at a high barrier width. With the increasing cadmium concentration in this heterostructure, the spin polarization efficiency is enhanced. The dwell time is reported and discussed.
- Subjects
MAGNETIC tunnelling; SPIN-orbit interactions; ELECTRON tunneling; HETEROSTRUCTURES; SPIN polarization
- Publication
SPIN (2010-3247), 2023, Vol 13, Issue 3, p1
- ISSN
2010-3247
- Publication type
Article
- DOI
10.1142/S2010324723500169