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High Pressure Processing of Ion Implanted GaN.
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- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1380, doi. 10.3390/electronics9091380
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- Article
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 7, p. 1, doi. 10.1007/s00339-018-1931-8
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- Article
SIMS accurate determination of matrix composition of topological crystalline insulator material Pb1 − xSnxSe.
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- Surface & Interface Analysis: SIA, 2020, v. 52, n. 3, p. 71, doi. 10.1002/sia.6705
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- Article
Corrosion and Wear-Resistant Composite Zirconium Nitride Layers Produced on the AZ91D Magnesium Alloy in Hybrid Process Using Hydrothermal Treatment.
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- Crystals (2073-4352), 2023, v. 13, n. 10, p. 1455, doi. 10.3390/cryst13101455
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- Article
Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors.
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- Crystals (2073-4352), 2019, v. 9, n. 11, p. 554, doi. 10.3390/cryst9110554
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- Article
Optical and electrical characterization of defects in zinc oxide thin films grown by atomic layer deposition.
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- Optica Applicata, 2009, v. 39, n. 4, p. 865
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- Article
Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers.
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- Optica Applicata, 2009, v. 39, n. 4, p. 655
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- Article
Thin films of ZnO and ZnMnO by atomic layer epitaxy.
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- Optica Applicata, 2005, v. 35, n. 3, p. 413
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- Article
Problems with cracking of Al<sub>x</sub>Ga<sub>1-x</sub>N layers.
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- Optica Applicata, 2005, v. 35, n. 1, p. 111
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- Article
Diffusion Nitride Surface Layers on Aluminum Substrates Produced by Hybrid Method Using Gas Nitriding.
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- Metals (2075-4701), 2024, v. 14, n. 5, p. 524, doi. 10.3390/met14050524
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- Article
Effects related to deposition temperature of ZnCoO films grown by atomic layer deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties.
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- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1666, doi. 10.1002/pssb.200983689
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- Article
Seeded growth of bulk ZnO by chemical vapor transport.
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- Physica Status Solidi (B), 2010, v. 247, n. 6, p. 1457, doi. 10.1002/pssb.200983232
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- Article
Cathodoluminescent Imaging of ZnO:N Films: Study of Annealing Processes Leading to Enhanced Acceptor Luminescence.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 10, p. 1, doi. 10.1002/pssa.202200466
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- Article
Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 1, p. 1, doi. 10.1002/pssa.202000318
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- Article
Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2171-0
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- Article
Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200545
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- Article
Processing of AlGaAs/GaAs quantum-cascade structures for terahertz laser.
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- Journal of Nanophotonics, 2015, v. 9, p. 1, doi. 10.1117/1.JNP.9.093079
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- Article
Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN.
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- Materials (1996-1944), 2024, v. 17, n. 5, p. 1160, doi. 10.3390/ma17051160
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- Article
Effect of Manganese Alloying on Infrared Detectors Made of Pb 1−x Mn x Te/CdTe Multilayer Composite.
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- Materials (1996-1944), 2023, v. 16, n. 12, p. 4211, doi. 10.3390/ma16124211
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- Article
Electrical and Structural Properties of Semi-Polar-ZnO/ a -Al 2 O 3 and Polar-ZnO/ c -Al 2 O 3 Films: A Comparative Study.
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- Materials (1996-1944), 2023, v. 16, n. 1, p. 151, doi. 10.3390/ma16010151
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Polar and Non-Polar Zn 1−x Mg x O:Sb Grown by MBE.
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- Materials (1996-1944), 2022, v. 15, n. 23, p. 8409, doi. 10.3390/ma15238409
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Improving the Properties of Composite Titanium Nitride Layers on the AZ91D Magnesium Alloy Using Hydrothermal Treatment.
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- Materials (1996-1944), 2021, v. 14, n. 19, p. 5903, doi. 10.3390/ma14195903
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Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.
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- Materials (1996-1944), 2021, v. 14, n. 14, p. 4048, doi. 10.3390/ma14144048
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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
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- Materials (1996-1944), 2021, v. 14, n. 2, p. 354, doi. 10.3390/ma14020354
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- Article