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- Title
Formation of Pores in Thin Germanium Films under Implantation by Ge<sup>+</sup> Ions.
- Authors
Lyadov, N. M.; Gavrilova, T. P.; Khantimerov, S. M.; Bazarov, V. V.; Suleimanov, N. M.; Shustov, V. A.; Nuzhdin, V. I.; Yanilkin, I. V.; Gumarov, A. I.; Faizrakhmanov, I. A.; Tagirov, L. R.
- Abstract
Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.
- Subjects
THIN films; ION implantation; HEAVY ions; GERMANIUM films; MAGNETRON sputtering; SCANNING electron microscopy; GERMANIUM
- Publication
Technical Physics Letters, 2020, Vol 46, Issue 7, p707
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785020070196