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- Title
Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide.
- Authors
Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E.; Lunev, N. A.; Volodin, V. A.; Maksimovskii, E. A.
- Abstract
A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.
- Subjects
SILICON films; AMORPHOUS silicon; THIN films; POLYCRYSTALLINE silicon; PARTICLES
- Publication
Technical Physics Letters, 2020, Vol 46, Issue 6, p583
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785020060280