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- Title
内电场增强 S 型异质结 N-C<sub>3</sub>N<sub>4</sub>/BiOCl<sub>x</sub>I<sub>1−x</sub> 的制备及其光催化性能.
- Authors
徐凯旋; 亢玉龙; 高晓明; 贺红斌; 袁中强; 胡亚楠
- Abstract
N doped carbon nitride (N-C3N4 )/BiOClx I1−x S-type heterojunctions were prepared by a facile one-step hydrothermal method. The crystal form, morphology, structure, elemental composition, surface functional groups and optical properties of the samples were characterized by XRD, XPS, SEM, TEM, FTIR and UV-Vis. The photocatalytic activity of N-C3N4/BiOClx I1−x oxidation of organic pollutants and reduction of Cr(VI) was investigated. The results show that N-C3N4/BiOClx I1−x sample exhibits the effective enhancement in light absorption. The charge carriers were generated by the transfer of the photoinduced electron from N-C3N4 to BiOClx I1−x across the interface under irradiation, which inhibited the recombination of electron-hole pairs. Under visible light irradiation, 20%N-BiOCl0.5I0.5 exhibited high activity, the degradation rate of phenol reached 98.53% with 2.5 h of visible light irradiation. Meanwhile, the reduction rate of Cr(VI) of 20%N-BiOCl0.5I0.5 reached to 99.11% with 1 h of visible light irradiation. 20%N-BiOCl0.5I0.5 showed good stability after five cycles. The total organic carbon (TOC) removal rate of degradation phenol by 20%N-BiOCl0.5I0.5 within 3 h was 80.21%. Combined with capture experiment, ESR and DFT calculation, the improvement activity of N-C3N4/BiOClx I1−x was attributed to the formation of S-type heterojunction, the internal electric field based on different Fermi levels between N-C3N4 and BiOClx I1−x, as well as band bending and Coulomb force, which together accelerated spatial separation of photogenerated carriers and orderly electron flow.
- Publication
Acta Materiae Compositae Sinica, 2023, Vol 40, Issue 9, p5134
- ISSN
1000-3851
- Publication type
Article
- DOI
10.13801/j.cnki.fhclxb.20221209.002