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- Title
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
- Authors
Wangila, Emmanuel; Gunder, Calbi; Lytvyn, Petro M.; Zamani-Alavijeh, Mohammad; Maia de Oliveira, Fernando; Kryvyi, Serhii; Stanchu, Hryhorii; Sheibani, Aida; Mazur, Yuriy I.; Yu, Shui-Qing; Salamo, Gregory
- Abstract
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.
- Subjects
SEMICONDUCTOR thin films; SAPPHIRES; EPITAXY; SURFACE morphology; CRYSTAL structure; AUDITING standards
- Publication
Crystals (2073-4352), 2024, Vol 14, Issue 5, p414
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst14050414