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- Title
Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver.
- Authors
Han, S.-W.; Park, S.-H.; Kim, H.-S.; Jo, M.-G.; Cha, H.-Y.
- Abstract
A normally-off AlGaN/GaN-on-Si metal–oxide–semiconductor-heterojunction field-effect transistor (MOS-HFET) with an integrated single-stage inverter is developed. The integrated single-stage GaN inverter consisted of an AlGaN/GaN driver MOS-HFET and a resistive load. With the monolithically integrated gate driver, the gate charging current was boosted from 10 to 170 mA, which reduced the charging and discharging times from 626 to 107 ns and 553 to 196 ns, respectively.
- Subjects
FIELD-effect transistors; FIELD-effect devices; MICROWAVE field effect transistors; ELECTRIC inverters; SILICON
- Publication
Electronics Letters (Wiley-Blackwell), 2017, Vol 53, Issue 3, p198
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.2813