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- Title
Synthesis of large-scale atomic-layer SnS through chemical vapor deposition.
- Authors
Ye, Gonglan; Gong, Yongji; Lei, Sidong; He, Yongmin; Li, Bo; Zhang, Xiang; Jin, Zehua; Dong, Liangliang; Lou, Jun; Vajtai, Robert; Zhou, Wu; Ajayan, Pulickel
- Abstract
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS, with a band gap of ~2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition (CVD) growth of atomic-layer SnS with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.
- Publication
Nano Research, 2017, Vol 10, Issue 7, p2386
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-017-1436-3