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- Title
Towards the controlled CVD growth of graphitic B-C-N atomic layer films: The key role of B-C delivery molecular precursor.
- Authors
Wang, Hao; Zhao, Chong; Liu, Lei; Xu, Zhi; Wei, Jiake; Wang, Wenlong; Bai, Xuedong; Wang, Enge
- Abstract
Graphene-like, ternary system B-C-N atomic layer materials promise highly tunable electronic properties and a plethora of potential applications. However, thus far, experimental synthesis of the B-C-N atomic layers normally yields a microscopic phase-segregated structure consisting of pure C and BN domains. Further, growing the truly ternary B-C-N phase layers with homogenous atomic arrangements has proven to be very challenging. Here, in designing a bettercontrolled process for the chemical vapor deposition (CVD) growth of B-C-N atomic layer films with the minimized C and BN phase segregation, we selected trimethyl borane (TMB), a gaseous organoboron compound with pre-existing B-C bonds, as the molecular precursor to react with ammonia (NH) gas that serves as the nitrification agent. The use of this unique B-C delivery precursor allows for the successful synthesis of high-quality and large-area B-C-N atomic layer films. Moreover, the TMB/NH reactant combination can offer a high level of tunability and control of the overall chemical composition of B-C-N atomic layers by regulating the relative partial pressure of two gaseous reactants. Electrical transport measurements show that a finite energy gap can be opened in the as-grown B-C-N atomic layers and its tunability is essentially dependent on the relative C to BN atomic compositions. On the basis of carefully controlled experiments, we show that the pre-existing B-C bonds in the TMB molecular precursor have played a crucial role in effectively reducing the C and BN phase segregation problem, thereby facilitating the formation of truly ternary B-C-N phase atomic layers.
- Publication
Nano Research, 2016, Vol 9, Issue 5, p1221
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-016-1018-9