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- Title
The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors.
- Authors
Li, Jia-Ning; Hu, San-Lue; Dong, Hao-Yu; Xu, Xiao-Ying; Wang, Jia-Fu; Li, Ang; Wang, Qing-Guo; Li, Yan-Li
- Abstract
Under the tuning of an external electric field, the variation of the geometric structures and the band gaps of the wurtzite semiconductors ZnS, ZnO, BeO, AlN, SiC and GaN have been investigated by the first-principles method based on density functional theory. The stability, density of states, band structures and the charge distribution have been analyzed under the electric field along (001) and (00) directions. Furthermore, the corresponding results have been compared without the electric field. According to our calculation, we find that the magnitude and the direction of the electric field have a great influence on the electronic structures of the wurtzite materials we mentioned above, which induce a phase transition from semiconductor to metal under a certain electric field. Therefore, we can regulate their physical properties of this type of semiconductor materials by tuning the magnitude and the direction of the electric field.
- Subjects
WURTZITE; SEMICONDUCTORS; ELECTRIC fields; BAND gaps; DENSITY functional theory; DENSITY of states
- Publication
Modern Physics Letters B, 2017, Vol 31, Issue 33, p-1
- ISSN
0217-9849
- Publication type
Article
- DOI
10.1142/S0217984917503109