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- Title
Formation of Spontaneous Lateral Heterostructures in High Al content Al<sub>x</sub>Ga<sub>1−x</sub>N Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy.
- Authors
Sarney, Wendy L.; Ji, Mihee; Leff, Asher C.; Larkin, LeighAnn S.; Garrett, Gregory A.; Sampath, Anand V.; Wraback, Michael
- Abstract
We report on the microstructure of high Al content (0.65 < x < 0.78) AlxGa1−xN planar films grown in the III-rich regime by plasma-assisted molecular beam epitaxy (PA-MBE) at elevated growth temperatures from 800°C to 950°C. Films grown at or above 900°C have lateral periodic contrast oscillations in high-angle annular dark field (HAADF) images from transmission electron microscopy (TEM). The features are perpendicular to the growth direction and arise from spatial variations in the ratio of Al to Ga atoms. These oscillations begin at the AlxGa1−xN/AlN interface and are different from previously observed inhomogeneities that arose from spontaneous ordering and random compositional fluctuations. As prior studies have shown, compositional anomalies can improve certain optical properties, these vertical periodic structures observed here merit further investigation.
- Subjects
MOLECULAR beam epitaxy; TRANSMISSION electron microscopy; HETEROSTRUCTURES; IMAGE transmission; ALLOYS; GALLIUM alloys
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 6, p2789
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-024-10952-x