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- Title
Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies.
- Authors
Siao, Hui-Ying; Bunk, Ryan J.; Woodall, Jerry M.
- Abstract
Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of a small amount of aluminum to the gallium and phosphorus containing LPE melt. The Al reduces the background concentration of oxygen in the melt, which is known to produce deep trap states in GaP. Additionally, it was found that by depositing an aluminum (Al)-rich AlGaP layer on top of the active GaP and then selectively etching it away, the surface morphology of the active layer was significantly improved. Thus, the modified LPE technique eliminates the major problem of meniscus lines associated with the standard LPE method.
- Subjects
GALLIUM phosphide; QUANTUM efficiency; LIQUID phase epitaxy; SOLAR cells; SILICON solar cells; ALUMINUM ores
- Publication
Journal of Electronic Materials, 2020, Vol 49, Issue 6, p3435
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-019-07848-6