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- Title
Effect of an AlO/TiO Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors.
- Authors
Han, Dong-Suk; Park, Jae-Hyung; Kang, Min-Soo; Shin, So-Ra; Jung, Yeon-Jae; Choi, Duck-Kyun; Park, Jong-Wan
- Abstract
The effect of an AlO/TiO stacked passivation layer on the performance of amorphous ZnSnO ( a-ZTO) thin-film transistors (TFTs) was investigated by comparing field-effect mobility ( μ) and subthreshold swing after passivation layer deposition. The values observed were 4.7 cm/Vs and 0.64 V/decade, respectively, for uncoated TFTs and 4.6 cm/Vs and 0.62 V/decade for passivated TFTs. In addition, excellent water vapor transmission was observed for electron beam-irradiated AlO/TiO-passivated poly(ether sulfone) substrates in a humidity test, because the AlO/TiO passivation layer can enhance the interface properties between AlO and TiO. To investigate the origin of this enhancement, we performed x-ray photoelectron spectroscopy of both unpassivated and AlO/TiO-passivated TFTs with a-ZTO back-channel layers after Ar annealing.
- Subjects
ALUMINUM oxide; TITANIUM oxides; PASSIVATION; METALLIC glasses; ZINC oxide; THIN film transistors
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 2, p651
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3554-y