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- Title
The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering.
- Authors
Liang, Guang-Xing; Fan, Ping; Cai, Xing-Min; Zhang, Dong-Ping; Zheng, Zhuang-Hao
- Abstract
To evaluate the influence of film thickness on the structural, electrical, and optical properties of Al-doped ZnO (AZO) films, a set of polycrystalline AZO samples with different thickness were deposited on glass substrates by ion-beam sputtering deposition (IBSD). X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive x-ray spectroscopy (EDS), four-point probe measurements, and spectrophotometry were used to characterize the films. XRD showed that all the AZO films had preferred c-axis orientation. The ZnO (110) peak appeared, and the intensity increased, with increasing thickness. All the samples exhibited compressive intrinsic stresses. AFM showed that the grain size along with the root-mean-square (RMS) roughness increased with increasing thickness. The decrease of resistivity is due to the corresponding change in grain size, surface morphology, and chemical composition. The average optical transmittance of the AZO films was over 80%, and a sharp fundamental absorption edge with red-shifting was observed in the visible region. The optical band gap decreased from 3.95 eV to 3.80 eV when the AZO film thickness increased from 100 nm to 500 nm.
- Subjects
THICKNESS measurement; ZINC oxide thin films; TRANSPARENCY (Optics); ELECTRIC conductivity; MICROFABRICATION; ION bombardment; SPUTTERING (Physics); THIN films; OPTICAL properties; X-ray diffraction
- Publication
Journal of Electronic Materials, 2011, Vol 40, Issue 3, p267
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-010-1503-y