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- Title
Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films.
- Authors
Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Yakimov, E. B.; Vergeles, P. S.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; In-Hwan Lee; Cheul-Ro Lee; S. J. Pearton
- Abstract
Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 1017 cm-2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.
- Subjects
NEUTRONS; RADIATION; EPITAXY; GALLIUM nitride; METALLIC films; METAL organic chemical vapor deposition; ELECTRON beams
- Publication
Journal of Electronic Materials, 2007, Vol 36, Issue 10, p1320
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-007-0203-8