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- Title
DC sputtered ZrO<sub>2</sub>/Zn<sub>(1−x)</sub>Sn<sub>(x)</sub>O thin-film transistors and their property evaluation.
- Authors
Bhat, Prashant; Salunkhe, Parashurama; Kekuda, Dhananjaya
- Abstract
A bottom gate staggered 30 nm Zn(1−x)Sn(x)O (x = 0.14) (TZO)-based thin-film transistors (TFTs) were fabricated using DC magnetron reactive sputtering method. Highly transparent 120 nm dc sputtered ZrO2 was used as a gate dielectric. The oxygen flow rate was varied from 20 to 24% during channel layer (TZO) coating and its effect on structural, morphological, optical, chemical, and electrical parameters were systematically studied. A nano scale roughness was noticed by atomic force microscopy (AFM), and ultra-smooth nature in root mean square roughness (RMS) was observed with an increment in the oxygen flow ratio. The increase in the oxygen-related defects with increase in the oxygen flow ratio in channel layer was evident from X-ray photoelectron spectroscopy (XPS). The electrical characterization of gate dielectric was carried out for Al–ZrO2–Al structure. The high capacitance density ~ 121.9 nF/cm2 for 120 nm ZrO2 was obtained from the capacitance–voltage (C–V) measurement. The fabricated TFTs operated in n-channel depletion mode and indicated pinch-off region at lower source–drain voltages. In addition, the transfer characteristics of TFTs confirmed Ion/Ioff ratio of 105, with a field effect mobility of 23 cm2/V.s. This low temperature processed TFT unlocks the possibility of use in the next generation foldable display technology.
- Subjects
DC sputtering; INDIUM gallium zinc oxide; X-ray photoelectron spectroscopy; TRANSISTORS; ATOMIC force microscopy; REACTIVE sputtering
- Publication
Applied Physics A: Materials Science & Processing, 2023, Vol 129, Issue 8, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-023-06839-z