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- Title
AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy.
- Authors
Sukhanov, M. A.; Bakarov, A. K.; Protasov, D. Yu.; Zhuravlev, K. S.
- Abstract
A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.
- Subjects
PHOTODETECTORS; EPITAXY; HETEROSTRUCTURES; MOLECULAR beam epitaxy; CHARGE carriers
- Publication
Technical Physics Letters, 2020, Vol 46, Issue 2, p154
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785020020285