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- Title
Comparative Photoluminescent Analysis of Point Defects in SiO<sub>2</sub> Induced by Implantation of Ar<sup>+</sup> Ions and Neutron Irradiation.
- Authors
Shcherbakov, I. P.; Chmel', A. E.
- Abstract
The introduction of Si+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).
- Subjects
NEUTRON irradiation; ION implantation; POINT defects; THERMAL neutrons; PHOTOLUMINESCENT polymers; ATOMIC nucleus
- Publication
Technical Physics Letters, 2019, Vol 45, Issue 3, p208
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785019030155