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- Title
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.
- Authors
Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang
- Abstract
X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPO layer is easily formed at the HfO/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin AlO layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
- Subjects
INDIUM phosphide; INTERFACES (Physical sciences); HAFNIUM compounds; GATE array circuits; DIELECTRIC properties; ATOMIC layer deposition
- Publication
Nanoscale Research Letters, 2017, Vol 12, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/s11671-017-2104-y