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- Title
Ion Implantation-Induced Plastic Phenomena in Metallic Alloys.
- Authors
Warren, Patrick H.; Clement, Caleb D.; Sun, Yongwen; Ciston, Jim; Ophus, Colin; Yang, Yang; Wharry, Janelle P.
- Abstract
Ion implantation is widely used for doping semiconductors or electroceramic materials and probing material behaviors in extreme radiation environments. However, implanted ions can induce compressive stresses into the host material, which can induce plasticity and mesoscopic deformation. However, these phenomena have almost exclusively been observed in brittle ionic and/or covalently bonded materials. Here, we present transmission electron microscopy observations of unusual implantation-induced plasticity in two metallic alloys. First, Fe2+ ions induce dislocation plasticity below the implanted layer in a model Fe-P alloy. Next, He+ ions form pressurized cavities which activate the fcc-to-hcp strain-induced martensitic transformation in Alloy 625. In both cases, the plasticity can be explained by a combination of implanted ions being incorporated into the lattice and the creation of irradiation defects. These findings have significant implications for mechanical testing of ion-implanted layers, while also opening pathways for using ion implantation to tune stress distributions in metallic alloys.
- Subjects
ALLOYS; SEMICONDUCTOR doping; ION implantation; MARTENSITIC transformations; SEMICONDUCTOR materials; PLASTICS
- Publication
JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2024, Vol 76, Issue 6, p2858
- ISSN
1047-4838
- Publication type
Article
- DOI
10.1007/s11837-024-06418-4