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- Title
High-Resolution Short Range Ion Detectors Based on 4H-SiC Films.
- Authors
Ivanov, A. M.; Kalinina, E. V.; Konstantinov, A. O.; Onushkin, G. A.; Strokan, N. B.; Kholuyanov, G. F.; Hallén, A.
- Abstract
The energy resolution of SiC detectors has been studied in application to the spectrometry of α particles with 5.1–5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 μm and an uncompensated donor concentration of (1–2) × 1015cm–3. An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the α particle spectrum to be revealed. The average energy of the electron–hole pair formation in 4H-SiC is estimated at 7.71 eV. © 2004 MAIK “Nauka / Interperiodica”.
- Subjects
IONS; DETECTORS; OPTICAL resolution; ELECTRONS; SPECTROMETRY; FORCE &; energy
- Publication
Technical Physics Letters, 2004, Vol 30, Issue 7, p575
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1783406