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- Title
The Effect of Hydrogen Etching on the Electrical Properties of Autoepitaxial Silicon Carbide Layers.
- Authors
Zelenin, V. V.; Davydov, D. V.; Korogodskiı, M. L.; Lebedev, A. A.
- Abstract
Experimental data showing that preliminary hydrogen etching of a SiC substrate influences the concentration of donors or acceptors in autoepitaxial SiC layers are presented. The impurity concentration in the epitaxial layers grown on etched and unetched substrates may differ by an order of magnitude. A physical explanation of the observed correlation is proposed. The importance of the effect of competitive etching on the epitaxial growth is pointed out.
- Subjects
HYDROGEN; SILICON carbide; EPITAXY
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 5, p382
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1482743