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- Title
Photoluminescence in the 1.55μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells.
- Authors
Tonkikh, A. A.; Egorov, V. A.; Polyakov, N. K.; Cirlin, G. E.; Kryzhanovskaya, N. V.; Sizov, D. S.; Ustinov, V. M.
- Abstract
It is demonstrated that longwave room-temperature photoluminescence (up to 1.65 µm) can be obtained using InGaAs/GaAs heterostructures of two types grown by low-temperature molecular beam epitaxy: (i) with InAs quantum dots formed at a low growth velocity and (ii) with an In[sub 0.5]Ga[sub 0.5]As quantum well grown in excess of the group III elements.
- Subjects
PHOTOLUMINESCENCE; GALLIUM arsenide; QUANTUM dots
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 5, p434
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1482759