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- Title
On the Possible Spatial Orientation of a Radiation-Induced Defect Responsible for the 1.0-eV IR Absorption Band in Gallium Arsenide.
- Authors
Dzhibuti, Z. V.; Dolidze, N. D.
- Abstract
A possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide was determined. The defect has a dipole moment oriented close to the 〈110〉 crystallographic axis and possesses a 〈111〉 atomic symmetry. Taking into account these results and assuming a divacancy character of this defect (suggested by some researchers), the defect is assigned a mixed divacancy structure of the V[sub Ga] + V[sub As] type.
- Subjects
GALLIUM arsenide; RADIATION; DIPOLE moments
- Publication
Technical Physics Letters, 2000, Vol 26, Issue 9, p789
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1315495