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- Title
Tribological Studies of α-β-Ga<sub>2</sub>O<sub>3</sub> Layers Paired with a Sapphire Counterface.
- Authors
Butenko, P. N.; Guzilova, L. I.; Chikiryaka, A. V.; Pechnikov, A. I.; Nikolaev, V. I.
- Abstract
The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-Ga2O3 are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-Ga2O3 with a corundum structure. In addition, α- and β-Ga2O3 demonstrate extremely low values of friction coefficients: lower than those of sapphire.
- Subjects
EPITAXIAL layers; SAPPHIRES; WEAR resistance; DRY friction; GALLIUM; CORUNDUM; SEMICONDUCTORS
- Publication
Technical Physics, 2022, Vol 66, Issue 4, p1186
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784221090048