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- Title
Structure and Polarization Relaxation of Ba<sub>0.5</sub>Sr<sub>0.5</sub>Nb<sub>2</sub>O<sub>6</sub>/(001)Si Films.
- Authors
Pavlenko, A. V.; Stryukov, D. V.; Mukhortov, V. M.; Biryukov, S. V.
- Abstract
The structure and dielectric characteristics of strontium barium niobate thin films deposited on single-crystalline silicon substrates without buffer layers are studied. It is found that the c axis in these heterostructures runs largely normally to the substrate surface and the <italic>a</italic> and <italic>b</italic> axes are randomly oriented in the plane of the substrate. The polarization relaxation in such heterostructures is investigated. It is shown that the film-substrate interface in the heterostructures grown by rf cathode sputtering may contain a low amount of long-lived charged defects.
- Subjects
SILICON films; HETEROSTRUCTURES; CATHODE sputtering (Plating process); RANDOM access memory; MICROELECTROMECHANICAL systems
- Publication
Technical Physics, 2018, Vol 63, Issue 3, p407
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784218030179