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- Title
Spin Torque Oscillator for High Performance Magnetic Memory.
- Authors
Sbiaa, Rachid; Bouziane, Khaled
- Abstract
A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.
- Subjects
ELECTRIC oscillators; MAGNETIC memory (Computers); SPIN transfer torque; PERPENDICULAR magnetic anisotropy; MAGNETIC tunnelling; THERMAL stability
- Publication
Sultan Qaboos University Journal for Science, 2015, Vol 20, Issue 1, p77
- ISSN
1027-524X
- Publication type
Article
- DOI
10.24200/squjs.vol20iss1pp77-82