We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
SiN<sub>x</sub>‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration.
- Authors
Zhu, Shilong; Gao, Haixia; Duan, Yiwei; Bai, Yifan; Qiu, Xuan; Ma, Xiaohua; Yang, Yintang
- Abstract
Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiNx‐based digital‐type RRAM with analog‐type RRAM by heterogeneous integration method. The Pt/SiNx/Ta/Ru is a digital RRAM due to the formation and breakage of the internal silicon dangling bonds conductive filaments, and the TiN/SiNx/Ta/Ru structure is an analog RRAM due to the traps‐filled limit region of the space‐charge limited current. The heterogeneously integrated digital RRAM has good cycling stability and endurance characteristics, and the heterogeneously integrated analog RRAM has high linearity and multistate counting characteristics. This heterogeneous integration approach is useful for the implementation of hybrid digital–analog RRAM.
- Subjects
NONVOLATILE random-access memory; RANDOM access memory
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2024, Vol 221, Issue 10, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202300964