We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates.
- Authors
Shi, Zhiyuan; Wang, Xiujun; Li, Qingtian; Yang, Peng; Lu, Guangyuan; Jiang, Ren; Wang, Huishan; Zhang, Chao; Cong, Chunxiao; Liu, Zhi; Wu, Tianru; Wang, Haomin; Yu, Qingkai; Xie, Xiaoming
- Abstract
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures. Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.
- Subjects
BORON nitride; LIQUID alloys; DIELECTRICS; OPTOELECTRONIC devices; ELECTRONIC equipment
- Publication
Nature Communications, 2020, Vol 11, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-020-14596-3