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- Title
4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance.
- Authors
Liu, Yanjuan; Jia, Dezhen; Fang, Junpeng
- Abstract
In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.
- Subjects
DIODES; TRENCHES; ENERGY dissipation; ATLASES
- Publication
Micromachines, 2023, Vol 14, Issue 5, p950
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14050950