We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films.
- Authors
Georgobiani, A. N.; Gruzintsev, A. N.; Volkov, V. T.; Vorob’ev, M. O.
- Abstract
It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing affects not only electrical properties but also the luminescence of ZnO:N. The bands in the photoluminescence spectrum, which are related to nitrogen, appear in the ultraviolet and visible regions.
- Subjects
ZINC oxide; ANNEALING of crystals; PHOTOLUMINESCENCE
- Publication
Semiconductors, 2002, Vol 36, Issue 3, p265
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1461400