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- Title
Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.
- Authors
Bouzid, F.; Dehimi, L.; Pezzimenti, F.
- Abstract
The electrical and optical characteristics of an n-type gallium nitride (GaN)-based Schottky barrier ultraviolet (UV) detector, where a platinum (Pt) metal layer forms the anode contact, have been evaluated by means of detailed numerical simulations considering a wide range of incident light intensities. By modeling the GaN physical properties, the detector current density-voltage characteristics and spectral responsivity for different (forward and reverse) bias voltages and temperatures are presented, assuming incident optical power ranging from 0.001 W cm to 1 W cm. The effect of defect states in the GaN substrate is also investigated. The results show that, at room temperature and under reverse bias voltage of −300 V, the dark current density is in the limit of 2.18 × 10 A cm. On illumination by a 0.36- μm UV uniform beam with intensity of 1 W cm, the photocurrent significantly increased to 2.33 A cm and the detector spectral responsivity reached a maximum value of 0.2 A W at zero bias voltage. Deep acceptor trap states and high temperature strongly affected the spectral responsivity curve in the considered 0.2 μm to 0.4 μm UV spectral range.
- Subjects
GALLIUM nitride; GALLIUM compounds; SCHOTTKY barrier; SEMICONDUCTOR-metal boundaries; DETECTORS
- Publication
Journal of Electronic Materials, 2017, Vol 46, Issue 11, p6563
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-017-5696-1