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- Title
Defect-Related Luminescence in Undoped GaN Grown by HVPE.
- Authors
Reshchikov, M.A.; Usikov, A.; Helava, H.; Makarov, Yu.
- Abstract
Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1-2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This unusual phenomenon can be explained on the assumption that the electron-capture coefficient for the GL-related defect decreases with temperature as T.
- Subjects
GALLIUM nitride synthesis; VAPOR phase epitaxial growth; PHOTOLUMINESCENCE; LOW temperatures; POINT defects; SPECTRUM analysis
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 5, p1281
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3540-4