Found: 19
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On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.
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- Semiconductors, 2020, v. 54, n. 3, p. 291, doi. 10.1134/S1063782620030082
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- Article
Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN.
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- Semiconductors, 2020, v. 54, n. 3, p. 278, doi. 10.1134/S1063782620030148
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- Article
On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates.
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- Semiconductors, 2020, v. 54, n. 3, p. 378, doi. 10.1134/S1063782620030173
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Impedance Spectroscopy of Porous Silicon and Silicon-Carbon Anodes Produced by Sintering.
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- Semiconductors, 2020, v. 54, n. 3, p. 383, doi. 10.1134/S1063782620030124
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Synthesis and Characterization of Sol–Gel Screen Printed Gd:ZnO (GZO) Film Towards Opto-Electronic Applications.
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- Semiconductors, 2020, v. 54, n. 3, p. 374, doi. 10.1134/S1063782620030069
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- Article
Parasitic Recombination in a Laser with Asymmetric Barrier Layers.
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- Semiconductors, 2020, v. 54, n. 3, p. 366, doi. 10.1134/S1063782620030203
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- Article
Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs.
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- Semiconductors, 2020, v. 54, n. 3, p. 362, doi. 10.1134/S1063782620030021
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- Article
Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation.
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- Semiconductors, 2020, v. 54, n. 3, p. 355, doi. 10.1134/S1063782620030112
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- Article
Properties of a Tamm-Plasmon-Based Microcavity with Metal Intracavity Layers and an Organic Active Region.
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- Semiconductors, 2020, v. 54, n. 3, p. 350, doi. 10.1134/S106378262003015X
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- Article
Double Avalanche Injection in Diode Avalanche Sharpeners.
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- Semiconductors, 2020, v. 54, n. 3, p. 345, doi. 10.1134/S1063782620030100
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- Article
Kelvin Probe Force Microscopy Study of the Electrostatic System of the Crystal Surface of AuNi/GaN Schottky Diodes.
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- Semiconductors, 2020, v. 54, n. 3, p. 337, doi. 10.1134/S1063782620030185
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- Article
Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.
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- Semiconductors, 2020, v. 54, n. 3, p. 330, doi. 10.1134/S1063782620030033
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- Article
On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing.
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- Semiconductors, 2020, v. 54, n. 3, p. 322, doi. 10.1134/S1063782620030070
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- Article
Ohmic Contacts to Gallium Nitride-Based Structures.
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- Semiconductors, 2020, v. 54, n. 3, p. 317, doi. 10.1134/S1063782620030197
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- Article
Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation.
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- Semiconductors, 2020, v. 54, n. 3, p. 311, doi. 10.1134/S1063782620030136
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- Article
Characteristics of DC Electrical Conductivity and Optoelectronic Features of Tin Dioxide Nanocrystals Synthesized by Sol–Gel Chemistry.
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- Semiconductors, 2020, v. 54, n. 3, p. 297, doi. 10.1134/S1063782620030045
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- Article
Reflection from the Side Face of a PbSb2Te4 Crystal.
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- Semiconductors, 2020, v. 54, n. 3, p. 282, doi. 10.1134/S1063782620030161
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- Article
Photoluminescence and Photoelectric Properties of the ZnO–LiNbO3 Thin-Film Structure in the Ultraviolet and Visible Spectral Regions.
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- Semiconductors, 2020, v. 54, n. 3, p. 285, doi. 10.1134/S1063782620030094
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- Article
Heating of Electrons in Pure Ge in a Quantum Magnetic Field Upon the Thermal Excitation of Charge Carriers.
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- Semiconductors, 2020, v. 54, n. 3, p. 275, doi. 10.1134/S1063782620030057
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