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- Title
Structural and Optical Characteristics of γ-In<sub>2</sub>Se<sub>3</sub> Nanorods Grown on Si Substrates.
- Authors
Yang, M. D.; Hu, C. H.; Tong, S. C.; Shen, J. L.; Lan, S. M.; Wu, C. H.; Lin, T. Y.
- Abstract
This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD).High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase. The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy of ?-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption.
- Subjects
NANORODS; NANOCOMPOSITE materials; CHEMICAL vapor deposition; TRANSMISSION electron microscopy; PHOTOLUMINESCENCE
- Publication
Journal of Nanomaterials, 2011, p1
- ISSN
1687-4110
- Publication type
Article
- DOI
10.1155/2011/976262