We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
High speed and low power consumption of superlattice-like Ge/SbSe thin films for phase change memory application.
- Authors
Wu, Weihua; Hu, Yifeng; Zhu, Xiaoqin; Sui, Yongxing; Yuan, Li; Zheng, Long; Zou, Hua; Sun, Yuemei; Song, Sannian; Song, Zhitang
- Abstract
In comparison to GeSbTe (GST) and pure SbSe (SbSe) thin films, superlattice-like (SLL) Ge/SbSe (Ge/SbSe) has a higher crystallization temperature, larger crystallization activation energy, better data retention and lower power consumption. SLL Ge/SbSe thin films with different thickness of Ge and SbSe layers were prepared by magnetron sputtering system. The amorphous-to-crystalline transitions of SLL Ge/SbSe thin films were investigated through in situ film resistance measurement. The crystallization activation energy of SLL Ge/SbSe thin films was calculated from a Kissinger plot. The data retention time was estimated through isothermal time-dependent resistance measurement by Arrhenius equation. The phase structure of the thin films annealed at different temperatures was investigated by using X-ray diffraction. Phase change memory cells based on the SLL [Ge(8 nm)/SbSe(5 nm)] thin films were fabricated to test and evaluate the switching speed and operation consumption.
- Subjects
ENERGY consumption; THIN films; PHASE change memory; SUPERLATTICES; ACTIVATION energy; X-ray diffraction
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 3, p2183
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-4008-x