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- Title
Studies on the thermoelectric effect in semiconducting ZnTe thin films.
- Authors
Hossain, M. S.; Islam, R.; Shahjahan, M.; Khan, K. A.
- Abstract
The thermoelectric power of Zinc Telluride (ZnTe) thin films, prepared onto glass substrate by e-beam evaporation technique in vacuum at ∼8 × 10−4 Pa, has been measured from room temperature up to 413 K with reference to pure copper. The deposition rate of the ZnTe thin films was maintained at about 2.05 nm s−1. The thickness and temperature dependence of its related parameters have been studied. The Fermi-levels were determined using a non-degenerate semiconducting model. The carrier scattering index, activation energy and temperature of coefficient of activation energy have all been obtained at different ranges of thickness and temperature. All the samples were optically transparent and amorphous in structure.
- Subjects
ZINC telluride; THERMAL conductivity; ELECTRIC conductivity; PROPERTIES of matter; ZINC; ELECTRIC discharges
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 11, p1114
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9483-2